| PART |
Description |
Maker |
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| MGF0905A MGF0905A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0952P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0805A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D N |
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
| FLL21E040IK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| FLL21E090IK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| FLL21E135IX |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL410IK-3C |
L-Band High Power GaAs FET
|
Eudyna Devices Inc
|
